Electrical characteristics of SiO2/high-k dielectric stacked tunnel barriers for nonvolatile memory applications

Goon Ho Park, Kwan Su Kim, Myung Ho Jung, Won Ju Cho, Jongwan Jung

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Tunnel barriers engineered by stacking multiple dielectric materials are investigated for nonvolatile memory application. In order to determine the optimized tunneling barrier stacks, we studied different high-k materials, such as ZrO2, HfO2, and Al2O3, with various thicknesses. The tunneling current through the SiO2/high-k stacked dielectrics at high fields is larger than that through the conventional SiO2 single barrier. On the other hand, the tunneling leakage current at low fields is effectively suppressed by using SiO2/high-k stacked dielectrics. Fast programming speed and long data retention time were obtained from these engineered tunnel barriers. The effect of the thickness of the SiO2/high-k stacks on minimizing the charge trapping was also demonstrated.

Original languageEnglish
Pages (from-to)116-119
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
Publication statusPublished - 2009 Jul 1
Externally publishedYes

Keywords

  • Crested barrier
  • Non-volatile memory
  • Tunnel barrier engineering
  • VARIOT barrier

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electrical characteristics of SiO<sub>2</sub>/high-k dielectric stacked tunnel barriers for nonvolatile memory applications'. Together they form a unique fingerprint.

  • Cite this