Electrical characteristics of Si-doped IGZO TFTs fabricated using ion implantation

Tetsuya Goto, Fuminobu Imaizumi, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si was doped to a-IGZO films by ion implantation. Hall effect measurement shows that electron carrier density increased by Si doping. For the Si-implanted IGZO TFT, gate bias stability against negative bias temperature illumination stress was improved, while the mobility was almost the same level as that without Si doping.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages13-16
Number of pages4
ISBN (Electronic)9781510845510
Publication statusPublished - 2016 Jan 1
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 2016 Dec 72016 Dec 9

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume1

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period16/12/716/12/9

Keywords

  • IGZO
  • Negative bias illumination stress
  • Oxygen vacancy
  • Si ion implantation
  • Thin film transistor

ASJC Scopus subject areas

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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