Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

K. Matano; K. Funamizu; M. Kouda; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3360761

Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

K. Matano, K. Funamizu, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Q _fix) in the gate dielectrics from the slope of EOT-V _fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmO _x/ Tm-silicate capacitors exhibit small Q _fix of -6.5×10 ¹² cm ^-2 in the small EOT region.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2010, CSTIC 2010
Pages	1129-1134
Number of pages	6
Edition	1
DOIs	https://doi.org/10.1149/1.3360761
Publication status	Published - 2010
Event	China Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China Duration: 2010 Mar 18 → 2010 Mar 19

Publication series

Name	ECS Transactions
Number	1
Volume	27
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	China Semiconductor Technology International Conference 2010, CSTIC 2010
Country	China
City	Shanghai
Period	10/3/18 → 10/3/19

ASJC Scopus subject areas

Engineering(all)

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Matano, K., Funamizu, K., Kouda, M., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2010). Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric. In China Semiconductor Technology International Conference 2010, CSTIC 2010 (1 ed., pp. 1129-1134). (ECS Transactions; Vol. 27, No. 1). https://doi.org/10.1149/1.3360761

Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric. / Matano, K.; Funamizu, K.; Kouda, M.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

China Semiconductor Technology International Conference 2010, CSTIC 2010. 1. ed. 2010. p. 1129-1134 (ECS Transactions; Vol. 27, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matano, K, Funamizu, K, Kouda, M, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2010, Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric. in China Semiconductor Technology International Conference 2010, CSTIC 2010. 1 edn, ECS Transactions, no. 1, vol. 27, pp. 1129-1134, China Semiconductor Technology International Conference 2010, CSTIC 2010, Shanghai, China, 10/3/18. https://doi.org/10.1149/1.3360761

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abstract = "Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Q fix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmO x/ Tm-silicate capacitors exhibit small Q fix of -6.5×10 12 cm -2 in the small EOT region.",

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AU - Ahmet, P.

AU - Tsutsui, K.

AU - Nishiyama, A.

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AB - Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Q fix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmO x/ Tm-silicate capacitors exhibit small Q fix of -6.5×10 12 cm -2 in the small EOT region.

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Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

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