Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

K. Matano; K. Funamizu; M. Kouda; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3360761

Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

K. Matano, K. Funamizu, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Q_fix) in the gate dielectrics from the slope of EOT-V _fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmO_x/ Tm-silicate capacitors exhibit small Q _fix of -6.5×10¹² cm^-2 in the small EOT region.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2010, CSTIC 2010
Publisher	Electrochemical Society Inc.
Pages	1129-1134
Number of pages	6
Edition	1
ISBN (Electronic)	9781607681564
ISBN (Print)	9781607682639
DOIs	https://doi.org/10.1149/1.3360761
Publication status	Published - 2010
Externally published	Yes
Event	China Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China Duration: 2010 Mar 18 → 2010 Mar 19

Publication series

Name	ECS Transactions
Number	1
Volume	27
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	China Semiconductor Technology International Conference 2010, CSTIC 2010
Country/Territory	China
City	Shanghai
Period	10/3/18 → 10/3/19

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3360761

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Matano, K., Funamizu, K., Kouda, M., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2010). Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric. In China Semiconductor Technology International Conference 2010, CSTIC 2010 (1 ed., pp. 1129-1134). (ECS Transactions; Vol. 27, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3360761

Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric. / Matano, K.; Funamizu, K.; Kouda, M.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

China Semiconductor Technology International Conference 2010, CSTIC 2010. 1. ed. Electrochemical Society Inc., 2010. p. 1129-1134 (ECS Transactions; Vol. 27, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matano, K, Funamizu, K, Kouda, M, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2010, Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric. in China Semiconductor Technology International Conference 2010, CSTIC 2010. 1 edn, ECS Transactions, no. 1, vol. 27, Electrochemical Society Inc., pp. 1129-1134, China Semiconductor Technology International Conference 2010, CSTIC 2010, Shanghai, China, 10/3/18. https://doi.org/10.1149/1.3360761

Matano, K. ; Funamizu, K. ; Kouda, M. ; Kakushima, K. ; Ahmet, P. ; Tsutsui, K. ; Nishiyama, A. ; Sugii, N. ; Natori, K. ; Hattori, T. ; Iwai, H. / Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric. China Semiconductor Technology International Conference 2010, CSTIC 2010. 1. ed. Electrochemical Society Inc., 2010. pp. 1129-1134 (ECS Transactions; 1).

@inproceedings{9393acba8cfc4e24b69bb771cee6deca,

title = "Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric",

abstract = "Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Qfix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmOx/ Tm-silicate capacitors exhibit small Q fix of -6.5×1012 cm-2 in the small EOT region.",

author = "K. Matano and K. Funamizu and M. Kouda and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",

year = "2010",

doi = "10.1149/1.3360761",

language = "English",

isbn = "9781607682639",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "1129--1134",

booktitle = "China Semiconductor Technology International Conference 2010, CSTIC 2010",

edition = "1",

note = "China Semiconductor Technology International Conference 2010, CSTIC 2010 ; Conference date: 18-03-2010 Through 19-03-2010",

}

TY - GEN

T1 - Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

AU - Matano, K.

AU - Funamizu, K.

AU - Kouda, M.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2010

Y1 - 2010

N2 - Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Qfix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmOx/ Tm-silicate capacitors exhibit small Q fix of -6.5×1012 cm-2 in the small EOT region.

AB - Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Qfix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmOx/ Tm-silicate capacitors exhibit small Q fix of -6.5×1012 cm-2 in the small EOT region.

UR - http://www.scopus.com/inward/record.url?scp=79958047763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958047763&partnerID=8YFLogxK

U2 - 10.1149/1.3360761

DO - 10.1149/1.3360761

M3 - Conference contribution

AN - SCOPUS:79958047763

SN - 9781607682639

T3 - ECS Transactions

SP - 1129

EP - 1134

BT - China Semiconductor Technology International Conference 2010, CSTIC 2010

PB - Electrochemical Society Inc.

T2 - China Semiconductor Technology International Conference 2010, CSTIC 2010

Y2 - 18 March 2010 through 19 March 2010

ER -

Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

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