Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

K. Matano, K. Funamizu, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Qfix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmOx/ Tm-silicate capacitors exhibit small Q fix of -6.5×1012 cm-2 in the small EOT region.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
PublisherElectrochemical Society Inc.
Pages1129-1134
Number of pages6
Edition1
ISBN (Electronic)9781607681564
ISBN (Print)9781607682639
DOIs
Publication statusPublished - 2010
Externally publishedYes
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: 2010 Mar 182010 Mar 19

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
Country/TerritoryChina
CityShanghai
Period10/3/1810/3/19

ASJC Scopus subject areas

  • Engineering(all)

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