@inproceedings{9393acba8cfc4e24b69bb771cee6deca,
title = "Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric",
abstract = "Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Qfix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmOx/ Tm-silicate capacitors exhibit small Q fix of -6.5×1012 cm-2 in the small EOT region.",
author = "K. Matano and K. Funamizu and M. Kouda and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",
year = "2010",
doi = "10.1149/1.3360761",
language = "English",
isbn = "9781607682639",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "1129--1134",
booktitle = "China Semiconductor Technology International Conference 2010, CSTIC 2010",
edition = "1",
note = "China Semiconductor Technology International Conference 2010, CSTIC 2010 ; Conference date: 18-03-2010 Through 19-03-2010",
}