Electrical characteristics of rare earth (La, Ce, Pr and Tm) oxides/silicates gate dielectric

K. Matano, K. Funamizu, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Metal-oxide-semiconductor (MOS) capacitors with rare earth (La, Ce, Pr and Tm) oxides/silicates were fabricated to investigate the effective fixed charges density (Q fix) in the gate dielectrics from the slope of EOT-V fb plots. In the small EOT region, a diffusion of gate metal atoms caused to increase fixed charge at the interface between RE-oxide and RE-silicate. TmO x/ Tm-silicate capacitors exhibit small Q fix of -6.5×10 12 cm -2 in the small EOT region.

    Original languageEnglish
    Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
    Pages1129-1134
    Number of pages6
    Edition1
    DOIs
    Publication statusPublished - 2010
    EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
    Duration: 2010 Mar 182010 Mar 19

    Publication series

    NameECS Transactions
    Number1
    Volume27
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
    CountryChina
    CityShanghai
    Period10/3/1810/3/19

    ASJC Scopus subject areas

    • Engineering(all)

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