Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22 nm generation and beyond

Xun Gu, Takenao Nemoto, Yugo Tomita, Kotaro Miyatani, Akane Saito, Yasuo Kobayashi, Akinobu Teramoto, Shin Ichiro Kuroki, Toshihisa Nozawa, Takaaki Matsuoka, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrical characteristics of novel non-porous low-k dielectric fluorocarbon/Cu single damascene interconnects are explored. Compatible line-to-line leakage current, low relative dielectric constant (k=2.3) and enough time-dependent dielectric breakdown lifetime are achieved. This novel non-porous fluorocarbon dielectric process technology is successfully integrated into Cu damascene interconnects and considered as a promising candidate to extendible for 22 nm generation and oeyond.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2010
Pages186-187
Number of pages2
Publication statusPublished - 2010 Dec 1
EventAdvanced Metallization Conference 2010 - Albany, NY, United States
Duration: 2010 Oct 52010 Oct 7

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2010
CountryUnited States
CityAlbany, NY
Period10/10/510/10/7

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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