Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22 nm generation and beyond

Xun Gu; Takenao Nemoto; Yugo Tomita; Kotaro Miyatani; Akane Saito; Yasuo Kobayashi; Akinobu Teramoto; Shin Ichiro Kuroki; Toshihisa Nozawa; Takaaki Matsuoka; Shigetoshi Sugawa; Tadahiro Ohmi

Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22 nm generation and beyond

Xun Gu, Takenao Nemoto, Yugo Tomita, Kotaro Miyatani, Akane Saito, Yasuo Kobayashi, Akinobu Teramoto, Shin Ichiro Kuroki, Toshihisa Nozawa, Takaaki Matsuoka, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electrical characteristics of novel non-porous low-k dielectric fluorocarbon/Cu single damascene interconnects are explored. Compatible line-to-line leakage current, low relative dielectric constant (k=2.3) and enough time-dependent dielectric breakdown lifetime are achieved. This novel non-porous fluorocarbon dielectric process technology is successfully integrated into Cu damascene interconnects and considered as a promising candidate to extendible for 22 nm generation and oeyond.

Original language	English
Title of host publication	Advanced Metallization Conference 2010
Pages	186-187
Number of pages	2
Publication status	Published - 2010 Dec 1
Event	Advanced Metallization Conference 2010 - Albany, NY, United States Duration: 2010 Oct 5 → 2010 Oct 7

Publication series

Name	Advanced Metallization Conference (AMC)
ISSN (Print)	1540-1766

Other

Other	Advanced Metallization Conference 2010
Country/Territory	United States
City	Albany, NY
Period	10/10/5 → 10/10/7

ASJC Scopus subject areas

Materials Science(all)
Industrial and Manufacturing Engineering

Cite this

Gu, X., Nemoto, T., Tomita, Y., Miyatani, K., Saito, A., Kobayashi, Y., Teramoto, A., Kuroki, S. I., Nozawa, T., Matsuoka, T., Sugawa, S., & Ohmi, T. (2010). Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22 nm generation and beyond. In Advanced Metallization Conference 2010 (pp. 186-187). (Advanced Metallization Conference (AMC)).

Gu, X, Nemoto, T, Tomita, Y, Miyatani, K, Saito, A, Kobayashi, Y, Teramoto, A, Kuroki, SI, Nozawa, T, Matsuoka, T, Sugawa, S & Ohmi, T 2010, Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22 nm generation and beyond. in Advanced Metallization Conference 2010. Advanced Metallization Conference (AMC), pp. 186-187, Advanced Metallization Conference 2010, Albany, NY, United States, 10/10/5.

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title = "Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22 nm generation and beyond",

abstract = "Electrical characteristics of novel non-porous low-k dielectric fluorocarbon/Cu single damascene interconnects are explored. Compatible line-to-line leakage current, low relative dielectric constant (k=2.3) and enough time-dependent dielectric breakdown lifetime are achieved. This novel non-porous fluorocarbon dielectric process technology is successfully integrated into Cu damascene interconnects and considered as a promising candidate to extendible for 22 nm generation and oeyond.",

author = "Xun Gu and Takenao Nemoto and Yugo Tomita and Kotaro Miyatani and Akane Saito and Yasuo Kobayashi and Akinobu Teramoto and Kuroki, {Shin Ichiro} and Toshihisa Nozawa and Takaaki Matsuoka and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2010",

month = dec,

day = "1",

language = "English",

isbn = "9781617822810",

series = "Advanced Metallization Conference (AMC)",

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T1 - Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22 nm generation and beyond

AU - Gu, Xun

AU - Nemoto, Takenao

AU - Tomita, Yugo

AU - Miyatani, Kotaro

AU - Saito, Akane

AU - Kobayashi, Yasuo

AU - Teramoto, Akinobu

AU - Kuroki, Shin Ichiro

AU - Nozawa, Toshihisa

AU - Matsuoka, Takaaki

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Electrical characteristics of novel non-porous low-k dielectric fluorocarbon/Cu single damascene interconnects are explored. Compatible line-to-line leakage current, low relative dielectric constant (k=2.3) and enough time-dependent dielectric breakdown lifetime are achieved. This novel non-porous fluorocarbon dielectric process technology is successfully integrated into Cu damascene interconnects and considered as a promising candidate to extendible for 22 nm generation and oeyond.

AB - Electrical characteristics of novel non-porous low-k dielectric fluorocarbon/Cu single damascene interconnects are explored. Compatible line-to-line leakage current, low relative dielectric constant (k=2.3) and enough time-dependent dielectric breakdown lifetime are achieved. This novel non-porous fluorocarbon dielectric process technology is successfully integrated into Cu damascene interconnects and considered as a promising candidate to extendible for 22 nm generation and oeyond.

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M3 - Conference contribution

AN - SCOPUS:79957640084

SN - 9781617822810

T3 - Advanced Metallization Conference (AMC)

SP - 186

EP - 187

BT - Advanced Metallization Conference 2010

T2 - Advanced Metallization Conference 2010

Y2 - 5 October 2010 through 7 October 2010

ER -

Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22 nm generation and beyond

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