A novel non-porous low-k dielectric, fluorocarbon, deposited by new microwave excited plasma enhanced chemical vapor deposition was successfully integrated into Cu damascene interconnects for the first time. Electrical characteristics of fluorocarbon/Cu damascene lines are investigated. A compatible line to line leakage current to the one with porous low-k carbon doped silicon oxide and a low effective dielectric constant as a value of 2.5 are achieved. The novel non-porous ultralow-k dielectric, fluorocarbon, is considered as a promising candidate to extendible for 22nm generation and beyond.
ASJC Scopus subject areas
- Physics and Astronomy(all)