Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond

Xun Gu, Takenao Nemoto, Yugo Tomita, Akihide Shirotori, Kotaro Miyatani, Akane Saito, Yasuo Kobayashi, Akinobu Teramoto, Shin Ichiro Kuroki, Toshihisa Nozawa, Takaaki Matsuoka, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A novel non-porous low-k dielectric, fluorocarbon, deposited by new microwave excited plasma enhanced chemical vapor deposition was successfully integrated into Cu damascene interconnects for the first time. Electrical characteristics of fluorocarbon/Cu damascene lines are investigated. A compatible line to line leakage current to the one with porous low-k carbon doped silicon oxide and a low effective dielectric constant as a value of 2.5 are achieved. The novel non-porous ultralow-k dielectric, fluorocarbon, is considered as a promising candidate to extendible for 22nm generation and beyond.

Original languageEnglish
Article number05EB02
JournalJapanese journal of applied physics
Volume50
Issue number5 PART 2
DOIs
Publication statusPublished - 2011 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond'. Together they form a unique fingerprint.

  • Cite this

    Gu, X., Nemoto, T., Tomita, Y., Shirotori, A., Miyatani, K., Saito, A., Kobayashi, Y., Teramoto, A., Kuroki, S. I., Nozawa, T., Matsuoka, T., Sugawa, S., & Ohmi, T. (2011). Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond. Japanese journal of applied physics, 50(5 PART 2), [05EB02]. https://doi.org/10.1143/JJAP.50.05EB02