Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


A metal oxide semiconductor field effect transistor (MOSFET) with ultra-thin La2O3/Y2O3 high-k gate dielectric was fabricated. The effects of thermal treatment process on both physical and electrical characteristics of the La2O3/Y2O3 stack were studied using XPS and electrical measurements. It was observed that the effective mobility of the fabricated MOSFETs with La2O3/Y2O3 gate stack was not degraded with increasing the annealing temperatures up to 600 °C. X-ray photoelectron spectroscopy (XPS) analysis also revealed that the formation of SiO2 and silicate layer at the interface was suppressed in La2O3/Y2O3 stack compare to that of in La2O3 single layer. Obtained results suggesting that La2O3/Y2O3 gate stack is one of the promising candidates for high-k gate insulator to be used in the future metal oxide field effect transistors.

Original languageEnglish
Pages (from-to)1769-1771
Number of pages3
JournalMicroelectronics Reliability
Issue number11-12
Publication statusPublished - 2008 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


Dive into the research topics of 'Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack'. Together they form a unique fingerprint.

Cite this