Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si 1-x Ge x /Si(1 0 0) heterostructure

Takahiro Seo, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Effectiveness of a Ge fraction modulated spacer in hole resonant tunneling diodes (RTDs) with Si/strained Si 1-x Ge x heterostructures epitaxially grown on Si(1 0 0) was investigated to improve the electrical characteristics at higher temperatures. Electrical characteristics measured for 30 RTDs, with the modulated spacer at higher Ge fraction (x = 0.48) on a single wafer, show that the deviation of the peak current and voltage at the resonant peak falls in ranges of ±25% and ±10%, respectively. For the RTDs, negative differential conductance (NDC) characteristics are obtained even at higher temperatures around 230 K than that for the RTDs with x = 0.42. The result indicates that the introduction of higher Ge fraction is effective for NDC in RTD at higher temperature.

Original languageEnglish
Pages (from-to)6265-6267
Number of pages3
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

Keywords

  • Heterostructure
  • Negative differential conductance (NDC)
  • Quantum well
  • Resonant tunneling diode (RTD)
  • Si
  • SiGe
  • Strain

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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