Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure

K. Funamizu, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, E. Y. Chang, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

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Engineering & Materials Science