Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure

K. Funamizu, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, E. Y. Chang, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
PublisherElectrochemical Society Inc.
Pages265-270
Number of pages6
Edition6
ISBN (Electronic)9781607680932
ISBN (Print)9781566777438
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 52009 Oct 7

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country/TerritoryAustria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • Engineering(all)

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