Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure

K. Funamizu, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, E. Y. Chang, T. Hattori, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.

    Original languageEnglish
    Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
    Pages265-270
    Number of pages6
    Edition6
    DOIs
    Publication statusPublished - 2009
    Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
    Duration: 2009 Oct 52009 Oct 7

    Publication series

    NameECS Transactions
    Number6
    Volume25
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
    CountryAustria
    CityVienna
    Period09/10/509/10/7

    ASJC Scopus subject areas

    • Engineering(all)

    Fingerprint Dive into the research topics of 'Electrical characteristics of HfO<sub>2</sub> and La<sub>2</sub>O <sub>3</sub> gate dielectrics for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structure'. Together they form a unique fingerprint.

  • Cite this

    Funamizu, K., Lin, Y. C., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Chang, E. Y., Hattori, T., & Iwai, H. (2009). Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 265-270). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206625