Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator

Md Akhtaruzzaman; Shun Ichiro Ohmi; Hiroshi Ishiwara

Electrical characteristics and stability of pentacene field-effect transistors in air using HfO₂ as a gate insulator

Md Akhtaruzzaman, Shun Ichiro Ohmi, Hiroshi Ishiwara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A top-contact type pentacene-based thin film transistor was fabricated using HfO₂ as a gate insulator. The HfO₂ of 12 nm thick was deposited on SiO₂/n⁺-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O₂ (20:4 sccm) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm²V^-1s^-1 and on/off ratio of 10 ⁴. The devices were found to be remarkably stable for as long as 20 days in air.

Original language	English
Title of host publication	Physics and Technology of Organic Semiconductor Devices
Pages	59-67
Number of pages	9
Publication status	Published - 2010
Externally published	Yes
Event	2008 MRS Fall Meeting - Boston, MA, United States Duration: 2008 Dec 2 → 2008 Dec 5

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1115
ISSN (Print)	0272-9172

Other

Other	2008 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	08/12/2 → 08/12/5

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Electrical characteristics and stability of pentacene field-effect transistors in air using HfO₂ as a gate insulator. / Akhtaruzzaman, Md; Ohmi, Shun Ichiro; Ishiwara, Hiroshi.

Physics and Technology of Organic Semiconductor Devices. 2010. p. 59-67 (Materials Research Society Symposium Proceedings; Vol. 1115).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - A top-contact type pentacene-based thin film transistor was fabricated using HfO2 as a gate insulator. The HfO2 of 12 nm thick was deposited on SiO2/n+-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O2 (20:4 sccm) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm2V-1s-1 and on/off ratio of 10 4. The devices were found to be remarkably stable for as long as 20 days in air.

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