Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator

Md Akhtaruzzaman, Shun Ichiro Ohmi, Hiroshi Ishiwara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A top-contact type pentacene-based thin film transistor was fabricated using HfO2 as a gate insulator. The HfO2 of 12 nm thick was deposited on SiO2/n+-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O2 (20:4 sccm) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm2V-1s-1 and on/off ratio of 10 4. The devices were found to be remarkably stable for as long as 20 days in air.

Original languageEnglish
Title of host publicationPhysics and Technology of Organic Semiconductor Devices
Pages59-67
Number of pages9
Publication statusPublished - 2010 May 21
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: 2008 Dec 22008 Dec 5

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1115
ISSN (Print)0272-9172

Other

Other2008 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period08/12/208/12/5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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