TY - GEN
T1 - Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator
AU - Akhtaruzzaman, Md
AU - Ohmi, Shun Ichiro
AU - Ishiwara, Hiroshi
PY - 2010
Y1 - 2010
N2 - A top-contact type pentacene-based thin film transistor was fabricated using HfO2 as a gate insulator. The HfO2 of 12 nm thick was deposited on SiO2/n+-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O2 (20:4 sccm) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm2V-1s-1 and on/off ratio of 10 4. The devices were found to be remarkably stable for as long as 20 days in air.
AB - A top-contact type pentacene-based thin film transistor was fabricated using HfO2 as a gate insulator. The HfO2 of 12 nm thick was deposited on SiO2/n+-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O2 (20:4 sccm) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm2V-1s-1 and on/off ratio of 10 4. The devices were found to be remarkably stable for as long as 20 days in air.
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M3 - Conference contribution
AN - SCOPUS:77952384184
SN - 9781605110875
T3 - Materials Research Society Symposium Proceedings
SP - 59
EP - 67
BT - Physics and Technology of Organic Semiconductor Devices
T2 - 2008 MRS Fall Meeting
Y2 - 2 December 2008 through 5 December 2008
ER -