Electrical and structural properties of TiO2- thin film with oxygen vacancies prepared by RF magnetron sputtering using oxygen radical

Kinya Kawamura, Naoya Suzuki, Takashi Tsuchiya, Yuichi Shimazu, Makoto Minohara, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Anatase TiO2-δ thin film was prepared by RF magnetron sputtering using oxygen radical and Ti-metal target. Degrees of the TiO2-δ crystal orientation in the thin film depends of the oxygen gas pressure (PO2 ) in the radical gun. The (004)-and (112)-oriented TiO2-δ thin films crystallized without postannealing have the mixed valence Ti4+/Ti3+ state. The electrical conductivities, which corresponds to n-type oxide semiconductor, is higher in the case of (004)-oriented TiO2-δ thin film containing with high concentration of oxygen vacancy. The donor band of TiO2-δ thin film is observed at >1.0 eV from the Fermi level (EF). The density-of-state at EF is higher in (004)-oriented TiO2-δ thin film. The above results indicate that the oxygen vacancies can control by changing the PO2 of the oxygen radical.

Original languageEnglish
Article number06GJ08
JournalJapanese journal of applied physics
Volume55
Issue number6
DOIs
Publication statusPublished - 2016 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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