Electrical and Structural Properties of the Partial Ternary Thin-Film System Ni-Si-B

Matthias Wambach, Nam Nguyen, Sven Hamann, Mitsuaki Nishio, Shinjiro Yagyu, Toyohiro Chikyow, Alfred Ludwig

Research output: Contribution to journalArticle

Abstract

High-throughput and combinatorial materials science methods were used to investigate the dependence of the work function in the Ni-Si system on the B content (0-30 at. %). Alloying of NiSi is used to adapt its properties to suit the needs as a gate electrode material. Thin-film materials libraries were fabricated and investigated with respect to their structural and electrical properties. Further the work function values of selected samples in the region of interest were analyzed. The results show that the work function can be adjusted between 4.86 eV (B = 4.2 at. %) and 5.16 eV (B = 29.2 at. %) for (NiSi)Bx.

Original languageEnglish
Pages (from-to)310-315
Number of pages6
JournalACS Combinatorial Science
Volume21
Issue number4
DOIs
Publication statusPublished - 2019 Apr 8
Externally publishedYes

Keywords

  • silicides
  • sputtering
  • structure-property relationships
  • thin films
  • work function

ASJC Scopus subject areas

  • Chemistry(all)

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  • Cite this

    Wambach, M., Nguyen, N., Hamann, S., Nishio, M., Yagyu, S., Chikyow, T., & Ludwig, A. (2019). Electrical and Structural Properties of the Partial Ternary Thin-Film System Ni-Si-B. ACS Combinatorial Science, 21(4), 310-315. https://doi.org/10.1021/acscombsci.8b00175