The electrical and physical properties of thin hafnium oxide films were fabricated by using remote plasma oxidation of Hf metal. The HfO2 capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65. XPS revealed that the oxygen radicals oxidize the Hf metal selectivity than Si substrate, leading to an increase of permittivity of HfO2 with reduced interfacial layer growth.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)