Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

Kazuhiko Yamamoto, Shigenori Hayashi, Masaaki Niwa, Masayuki Asai, Sadayoshi Horii, Hironobu Miya

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)

Abstract

The electrical and physical properties of thin hafnium oxide films were fabricated by using remote plasma oxidation of Hf metal. The HfO2 capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65. XPS revealed that the oxygen radicals oxidize the Hf metal selectivity than Si substrate, leading to an increase of permittivity of HfO2 with reduced interfacial layer growth.

Original languageEnglish
Pages (from-to)2229-2231
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number11
DOIs
Publication statusPublished - 2003 Sep 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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