Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

Kazuhiko Yamamoto; Shigenori Hayashi; Masaaki Niwa; Masayuki Asai; Sadayoshi Horii; Hironobu Miya

doi:10.1063/1.1609246

Electrical and physical properties of HfO₂ films prepared by remote plasma oxidation of Hf metal

Kazuhiko Yamamoto, Shigenori Hayashi, Masaaki Niwa, Masayuki Asai, Sadayoshi Horii, Hironobu Miya

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

The electrical and physical properties of thin hafnium oxide films were fabricated by using remote plasma oxidation of Hf metal. The HfO₂ capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65. XPS revealed that the oxygen radicals oxidize the Hf metal selectivity than Si substrate, leading to an increase of permittivity of HfO₂ with reduced interfacial layer growth.

Original language	English
Pages (from-to)	2229-2231
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	11
DOIs	https://doi.org/10.1063/1.1609246
Publication status	Published - 2003 Sept 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The electrical and physical properties of thin hafnium oxide films were fabricated by using remote plasma oxidation of Hf metal. The HfO2 capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65. XPS revealed that the oxygen radicals oxidize the Hf metal selectivity than Si substrate, leading to an increase of permittivity of HfO2 with reduced interfacial layer growth.",

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T1 - Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

AU - Yamamoto, Kazuhiko

AU - Hayashi, Shigenori

AU - Niwa, Masaaki

AU - Asai, Masayuki

AU - Horii, Sadayoshi

AU - Miya, Hironobu

PY - 2003/9/15

Y1 - 2003/9/15

N2 - The electrical and physical properties of thin hafnium oxide films were fabricated by using remote plasma oxidation of Hf metal. The HfO2 capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65. XPS revealed that the oxygen radicals oxidize the Hf metal selectivity than Si substrate, leading to an increase of permittivity of HfO2 with reduced interfacial layer growth.

AB - The electrical and physical properties of thin hafnium oxide films were fabricated by using remote plasma oxidation of Hf metal. The HfO2 capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65. XPS revealed that the oxygen radicals oxidize the Hf metal selectivity than Si substrate, leading to an increase of permittivity of HfO2 with reduced interfacial layer growth.

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Electrical and physical properties of HfO₂ films prepared by remote plasma oxidation of Hf metal

Abstract

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