Electrical and Physical Characterization of Remote Plasma Oxidized HfO2Gate Dielectrics

Kazuhiko Yamamoto, Wim Deweerd, Marc Aoulaiche, Michel Houssa, Stefan De Gendt, Sadayoshi Horii, Misayuki Asai, Atsushi Sano, Shigenori Hayashi, Masaaki Niwa

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Bi-layer gate stacks consisting of a HfO2 and an interfacial layer are fabricated by remote plasma oxidation (RPO) of Hf metal deposited on an Si substrate. Hf metal is fully oxidized by the RPO even at a temperature as low as 400 °C due to radical oxygens, leading to an improvement in the quality of HfO2 with less impact to the interfacial layer growth. An insufficient oxidation leads to a deterioration of mobility with increasing interface traps and positive bias temperature instability, which is likely caused by the oxygen vacancies acting as traps induced by the remaining Hf metal. The SiO2-like interface improves the mobility with reduced interface states. Full oxidation and the controlled SiO2-like interface demonstrate RPO as a promising way for gate-stack optimization.

Original languageEnglish
Pages (from-to)1153-1160
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number5
Publication statusPublished - 2006 May
Externally publishedYes


  • Hafnium
  • Metal-insulator-semiconductor (MIS) devices
  • Oxidation
  • Reliability
  • Semiconductor-insulator interfaces

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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