Abstract
IrO2 thin films were prepared by laser ablation using an Ir target at substrate temperatures (Tsub) from room temperature (RT) to 873 K in an oxygen atmosphere. A small amount of Ir metal was contained in IrO2 films prepared at Tsub, = RT. The lattice parameters particularly a-axis values decreased with increasing Tsub, and the values were a = 0.452 nm, c = 0.315 nm at Tsub = 873 K in agreement with those of bulk IrO2. The surface roughness increased from 1.2 to 5.2 nm with increasing Tsub. These values imply that the IrO 2 films were far smoother than those prepared by MOCVD and sputtering. The electrical conductivity of IrO2 films prepared at TSub = RT changed from semiconductor-like to metallic behavior after a heat-treatment; on the other hand, those prepared at Tsub > 573 K were metallic without changing after heat-treatment. The IrO2 films prepared at Tsub = 873 K showed the highest electrical conductivity of 37 × 10-8 ωm at RT. The optical transmittance of IrO2 thin films were mainly dependent on thickness and surface roughness, and were around 10% at a wavelength range from 300 to 800 nm.
Original language | English |
---|---|
Pages (from-to) | 3023-3027 |
Number of pages | 5 |
Journal | Materials Transactions |
Volume | 45 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2004 Oct |
Keywords
- AFM
- Glancing angle incidence X-ray diffraction
- IrO film
- Resistivity
- Transmittance
- X-ray photaelectron spectra
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering