Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantation

Shin'ichi Yamamura, Tadamasa Kimura, Shigemi Yugo, Riichiro Saito, Michio Murata, Takeshi Kamiya

Research output: Contribution to journalArticlepeer-review

Abstract

Defect levels in undoped n-InGaAs caused by the implantation of boron ions and their behaviour upon post-implantation rapid thermal annealing (RTA) have been investigated. Acceptorlike electron traps, which decreased electron density, which first formed by implantation at ∼ 0.2 eV below the conduction band edge. After furtherimplantation shallow donor states, which increased electron density, appeared, and limited the maximum attainable resistivity of InGaAs to several tens of ω cm. Post-implantation RTA at 600°C reduced the electron traps and activated further the shallow donors, leading to an increase in electron density to much higher values than that of the as-grown undoped InGaAs.

Original languageEnglish
Pages (from-to)632-635
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume80-81
Issue numberPART 1
DOIs
Publication statusPublished - 1993 Jun 3
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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