Abstract
High mobility enhancement mode InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated with an anodic Al2O3/anodic native oxide double-layer gate insulator grown by a simple anodization process. Effective electron mobilities in the channel as high as 1500-3000 cm2 V-1s-1 were achieved after a post-growth annealing in H2 at 400 °C for 30 min. The slow drain current drift phenomenon was also greatly reduced by the annealing. The optical properties of the double-layer gate insulator MISFETs were also investigated, and a current gain as high as 104 was obtained. A brief phenomenological discussion on the gain mechanism is given.
Original language | English |
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Pages (from-to) | 107-117 |
Number of pages | 11 |
Journal | Thin Solid Films |
Volume | 103 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 1983 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry