Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

T. Sawada; H. Hasegawa; H. Ohno

doi:10.1016/0040-6090(83)90429-7

Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

T. Sawada, H. Hasegawa, H. Ohno

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

High mobility enhancement mode InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated with an anodic Al₂O₃/anodic native oxide double-layer gate insulator grown by a simple anodization process. Effective electron mobilities in the channel as high as 1500-3000 cm² V^-1s^-1 were achieved after a post-growth annealing in H₂ at 400 °C for 30 min. The slow drain current drift phenomenon was also greatly reduced by the annealing. The optical properties of the double-layer gate insulator MISFETs were also investigated, and a current gain as high as 10⁴ was obtained. A brief phenomenological discussion on the gain mechanism is given.

Original language	English
Pages (from-to)	107-117
Number of pages	11
Journal	Thin Solid Films
Volume	103
Issue number	1-3
DOIs	https://doi.org/10.1016/0040-6090(83)90429-7
Publication status	Published - 1983
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(83)90429-7

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@article{6a8002ef88684997ab721487af9ddd24,

title = "Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator",

abstract = "High mobility enhancement mode InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated with an anodic Al2O3/anodic native oxide double-layer gate insulator grown by a simple anodization process. Effective electron mobilities in the channel as high as 1500-3000 cm2 V-1s-1 were achieved after a post-growth annealing in H2 at 400 °C for 30 min. The slow drain current drift phenomenon was also greatly reduced by the annealing. The optical properties of the double-layer gate insulator MISFETs were also investigated, and a current gain as high as 104 was obtained. A brief phenomenological discussion on the gain mechanism is given.",

author = "T. Sawada and H. Hasegawa and H. Ohno",

note = "Funding Information: This work was financiallys upportedin part by a Grant-in-Aidfrom the Ministryo f EducationS,c iencea ndC ultureJ,a pan.",

year = "1983",

doi = "10.1016/0040-6090(83)90429-7",

language = "English",

volume = "103",

pages = "107--117",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

AU - Sawada, T.

AU - Hasegawa, H.

AU - Ohno, H.

N1 - Funding Information: This work was financiallys upportedin part by a Grant-in-Aidfrom the Ministryo f EducationS,c iencea ndC ultureJ,a pan.

PY - 1983

Y1 - 1983

N2 - High mobility enhancement mode InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated with an anodic Al2O3/anodic native oxide double-layer gate insulator grown by a simple anodization process. Effective electron mobilities in the channel as high as 1500-3000 cm2 V-1s-1 were achieved after a post-growth annealing in H2 at 400 °C for 30 min. The slow drain current drift phenomenon was also greatly reduced by the annealing. The optical properties of the double-layer gate insulator MISFETs were also investigated, and a current gain as high as 104 was obtained. A brief phenomenological discussion on the gain mechanism is given.

AB - High mobility enhancement mode InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated with an anodic Al2O3/anodic native oxide double-layer gate insulator grown by a simple anodization process. Effective electron mobilities in the channel as high as 1500-3000 cm2 V-1s-1 were achieved after a post-growth annealing in H2 at 400 °C for 30 min. The slow drain current drift phenomenon was also greatly reduced by the annealing. The optical properties of the double-layer gate insulator MISFETs were also investigated, and a current gain as high as 104 was obtained. A brief phenomenological discussion on the gain mechanism is given.

UR - http://www.scopus.com/inward/record.url?scp=0020750299&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020750299&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(83)90429-7

DO - 10.1016/0040-6090(83)90429-7

M3 - Article

AN - SCOPUS:0020750299

VL - 103

SP - 107

EP - 117

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-3

ER -

Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

Abstract

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