Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

T. Sawada, H. Hasegawa, H. Ohno

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

High mobility enhancement mode InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated with an anodic Al2O3/anodic native oxide double-layer gate insulator grown by a simple anodization process. Effective electron mobilities in the channel as high as 1500-3000 cm2 V-1s-1 were achieved after a post-growth annealing in H2 at 400 °C for 30 min. The slow drain current drift phenomenon was also greatly reduced by the annealing. The optical properties of the double-layer gate insulator MISFETs were also investigated, and a current gain as high as 104 was obtained. A brief phenomenological discussion on the gain mechanism is given.

Original languageEnglish
Pages (from-to)107-117
Number of pages11
JournalThin Solid Films
Volume103
Issue number1-3
DOIs
Publication statusPublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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