Electrical and magnetic properties of a single crystal UCu 2Si2

Tatsuma D. Matsuda, Yoshinori Haga, Shugo Ikeda, Andrei Galatanu, Etsuji Yamamoto, Hiroaki Shishido, Mineko Yamada, Jun Ichi Yamaura, Masato Hedo, Yoshiya Uwatoko, Takuya Matsumoto, Toshiya Tada, Satoru Noguchi, Toyonari Sugimoto, Keitaro Kuwahara, Kazuaki Iwasa, Masahumi Kohgi, Rikio Settai, Yoshichika Onuki

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

We have succeeded in growing a high-quality single crystal of UCu 2Si2 with the tetragonal structure by the Sn-flux method and measured the electrical resistivity, magnetic susceptibility, magnetization and specific heat. UCu2Si2 is found to order antiferromagnetically below TN = 106 K, and follows a successive ferromagnetic ordering at TC = 100 K. The magnetic properties are highly anisotropic, reflecting the crystal structure. An easy-axis of magnetization is found to be the [001] direction (c-axis) both in the antiferromagnetic and ferromagnetic phases, while the [100] direction (a-axis) corresponds to the hard-axis in magnetization. The magnetization curve in the antiferromagnetic phase indicates a clear metamagnetic transition at a low field of about 1 kOe and changes into a ferromagnetic magnetization curve below TC = 100 K. The saturation moment is determined as 1.75 μB/U at 2 K. The electronic specific heat coefficient is also determined as 20 mJ/(K2·mol).

Original languageEnglish
Pages (from-to)1552-1556
Number of pages5
Journaljournal of the physical society of japan
Volume74
Issue number5
DOIs
Publication statusPublished - 2005 May 1

Keywords

  • Flux method
  • Ising-type ferromagnetism
  • Single crystal growth
  • UCuSi

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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