Electrical and infrared absorption studies on La-silicate/Si interface

Takuya Seki, Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

La-silicate/Si interface were investigated by measuring C-V characteristics and infra-red absorbance spectra. Interface state density (Dit) down to 1010 cm-2/eV was obtained by annealing at temperature over 800 °C. A red-shift due to Si-O-Si LO phonon toward 1250 cm -1 was found. We speculate that relaxation of SiO4 networks in Lasilicates results in low Dit.

Original languageEnglish
Pages55-57
Number of pages3
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan, Province of China
Duration: 2013 Feb 252013 Feb 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan, Province of China
CityKaohsiung
Period13/2/2513/2/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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