Electrical analyses of nickel silicide formed on Si nanowires with 10-nm-width

K. Matsumoto, M. Koyama, Y. Wu, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to conferencePaper

Abstract

Ni silicide with the nanowire line width down to 15 nm was formed by the reaction of Ni thin films with Si nanowires. The electrical analyses revealed that Ni2Si was formed on all Si nanowires having width in the range from 15 to 80 nm. However, a drastic increase in the resistivity was observed for the width smaller than 35 nm. The reason for this increase is discussed in terms of roughness in line width and electron scattering on the surface of nanowires.

Original languageEnglish
Pages58-61
Number of pages4
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan, Province of China
Duration: 2013 Feb 252013 Feb 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan, Province of China
CityKaohsiung
Period13/2/2513/2/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Matsumoto, K., Koyama, M., Wu, Y., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2013). Electrical analyses of nickel silicide formed on Si nanowires with 10-nm-width. 58-61. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, Province of China. https://doi.org/10.1109/ISNE.2013.6512288