Electric resistance of Fe/Al2O3 multilayered films prepared by an electron beam evaporation method

Yuji Ueda, Wataru Takakura, Shoji Ikeda

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The processing speed of the computer needs speeding up because of an increase in the packing density, and the frequency for recording should shift to the higher side. The eddy current loss is brought about by the use of the high frequency, and it can be reduced by increasing the electrical resistivity of the material. The multilayers produced by alternate combination of the metal and the insulator is thought to be as one of the effective methods for preparing the high resistivity material. In this work, the electrical resistivity of the Fe/Al2O3 multilayers produced by varying the thickness of the Fe and Al2O3 films have been discussed. Moreover, in order to produce the magnetic anisotropy the film was prepared by varying the incidence angle of the vapor deposition. The resistivity increases with increasing Al2O3 thickness. The resistivity shows a tendency of having a maximum value in the vicinity of angle θ = 45° with further falling and rising behavior. On the other hand, the resistivity ratio has a maximum value around the angle of 45° and afterwards decreases gradually. Theoretical values obtained by considering atomic arrangement and experimental results are in agreement.

Original languageEnglish
Pages (from-to)878-881
Number of pages4
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume64
Issue number10
DOIs
Publication statusPublished - 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electric resistance of Fe/Al<sub>2</sub>O<sub>3</sub> multilayered films prepared by an electron beam evaporation method'. Together they form a unique fingerprint.

Cite this