Electric properties of nanoscale contacts on Si(111) surfaces

R. Hasunuma, T. Komeda, H. Tokumoto

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

We have investigated the electric properties of nanoscale contacts on Si(111)-7 × 7 surfaces with a scanning tunneling microscope (STM). The contacts between a W STM tip and Si substrates exhibit Schottky-type rectification, whose properties are obviously different from the conventional plane diodes. The current variation during tip retraction from the contact region indicates the influence of Si atoms between the tip and substrates, as well as the contact size effects, which result from the Si atom removal with the present experimental technique.

Original languageEnglish
Pages (from-to)84-89
Number of pages6
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998 Jun
Externally publishedYes

Keywords

  • Electric properties
  • Indentation
  • Point contact
  • STM
  • Si wire
  • Si(111)

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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