Abstract
We have investigated the electric properties of nanoscale contacts on Si(111)-7 × 7 surfaces with a scanning tunneling microscope (STM). The contacts between a W STM tip and Si substrates exhibit Schottky-type rectification, whose properties are obviously different from the conventional plane diodes. The current variation during tip retraction from the contact region indicates the influence of Si atoms between the tip and substrates, as well as the contact size effects, which result from the Si atom removal with the present experimental technique.
| Original language | English |
|---|---|
| Pages (from-to) | 84-89 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 130-132 |
| DOIs | |
| Publication status | Published - 1998 Jun |
| Externally published | Yes |
Keywords
- Electric properties
- Indentation
- Point contact
- STM
- Si wire
- Si(111)
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films