Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

Hirotaka Koide, Yuki Nagao, Kunihito Koumoto, Yuka Takasaki, Tomonari Umemura, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2 MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S| -value abruptly increases but then gradually decreases as Vg increases, clearly suggesting the antiparabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.

    Original languageEnglish
    Article number182105
    JournalApplied Physics Letters
    Volume97
    Issue number18
    DOIs
    Publication statusPublished - 2010 Nov 1

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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