TY - JOUR
T1 - Electric-field modulation of thermopower for the KTaO3 field-effect transistors
AU - Yoshikawa, Akira
AU - Uchida, Kosuke
AU - Koumoto, Kunihito
AU - Kato, Takeharu
AU - Ikuhara, Yuichi
AU - Ohta, Hiromichi
PY - 2009/12/1
Y1 - 2009/12/1
N2 - We show herein fabrication and field-modulated thermopower for KTaO 3 single-crystal based field-effect transistors (FETs). The KTaO 3 FET exhibits field-effect mobility of ∼8 cm2 V -1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 μVK-1 by the application of gate electric field up to 1.5MVcm-1, ∼400 μVK-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.
AB - We show herein fabrication and field-modulated thermopower for KTaO 3 single-crystal based field-effect transistors (FETs). The KTaO 3 FET exhibits field-effect mobility of ∼8 cm2 V -1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 μVK-1 by the application of gate electric field up to 1.5MVcm-1, ∼400 μVK-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.
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U2 - 10.1143/APEX.2.1211103
DO - 10.1143/APEX.2.1211103
M3 - Article
AN - SCOPUS:73149094965
VL - 2
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 12
M1 - 1211103
ER -