Electric-field modulation of thermopower for the KTaO3 field-effect transistors

Akira Yoshikawa, Kosuke Uchida, Kunihito Koumoto, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)


    We show herein fabrication and field-modulated thermopower for KTaO 3 single-crystal based field-effect transistors (FETs). The KTaO 3 FET exhibits field-effect mobility of ∼8 cm2 V -1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 μVK-1 by the application of gate electric field up to 1.5MVcm-1, ∼400 μVK-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.

    Original languageEnglish
    Article number1211103
    JournalApplied Physics Express
    Issue number12
    Publication statusPublished - 2009 Dec 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)


    Dive into the research topics of 'Electric-field modulation of thermopower for the KTaO3 field-effect transistors'. Together they form a unique fingerprint.

    Cite this