Electric-field modulation of thermopower for the KTaO3 field-effect transistors

Akira Yoshikawa; Kosuke Uchida; Kunihito Koumoto; Takeharu Kato; Yuichi Ikuhara; Hiromichi Ohta

doi:10.1143/APEX.2.1211103

Electric-field modulation of thermopower for the KTaO₃ field-effect transistors

Akira Yoshikawa, Kosuke Uchida, Kunihito Koumoto, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We show herein fabrication and field-modulated thermopower for KTaO ₃ single-crystal based field-effect transistors (FETs). The KTaO ₃ FET exhibits field-effect mobility of ∼8 cm² V ^-1 s^-1, which is ∼4 times larger than that of SrTiO₃ FETs. The thermopower of the KTaO₃ FET decreased from 600 to 220 μVK^-1 by the application of gate electric field up to 1.5MVcm^-1, ∼400 μVK^-1 below that of an SrTiO₃ FET, clearly reflecting the smaller carrier effective mass of KTaO₃.

Original language	English
Article number	1211103
Journal	Applied Physics Express
Volume	2
Issue number	12
DOIs	https://doi.org/10.1143/APEX.2.1211103
Publication status	Published - 2009 Dec 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "We show herein fabrication and field-modulated thermopower for KTaO 3 single-crystal based field-effect transistors (FETs). The KTaO 3 FET exhibits field-effect mobility of ∼8 cm2 V -1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 μVK-1 by the application of gate electric field up to 1.5MVcm-1, ∼400 μVK-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.",

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T1 - Electric-field modulation of thermopower for the KTaO3 field-effect transistors

AU - Yoshikawa, Akira

AU - Uchida, Kosuke

AU - Koumoto, Kunihito

AU - Kato, Takeharu

AU - Ikuhara, Yuichi

AU - Ohta, Hiromichi

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We show herein fabrication and field-modulated thermopower for KTaO 3 single-crystal based field-effect transistors (FETs). The KTaO 3 FET exhibits field-effect mobility of ∼8 cm2 V -1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 μVK-1 by the application of gate electric field up to 1.5MVcm-1, ∼400 μVK-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.

AB - We show herein fabrication and field-modulated thermopower for KTaO 3 single-crystal based field-effect transistors (FETs). The KTaO 3 FET exhibits field-effect mobility of ∼8 cm2 V -1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 μVK-1 by the application of gate electric field up to 1.5MVcm-1, ∼400 μVK-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.

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Electric-field modulation of thermopower for the KTaO₃ field-effect transistors

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