Electric-field modulation of thermopower for the KTaO3 field-effect transistors

Akira Yoshikawa, Kosuke Uchida, Kunihito Koumoto, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    We show herein fabrication and field-modulated thermopower for KTaO 3 single-crystal based field-effect transistors (FETs). The KTaO 3 FET exhibits field-effect mobility of ∼8 cm2 V -1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 μVK-1 by the application of gate electric field up to 1.5MVcm-1, ∼400 μVK-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.

    Original languageEnglish
    Article number1211103
    JournalApplied Physics Express
    Volume2
    Issue number12
    DOIs
    Publication statusPublished - 2009 Dec 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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    Yoshikawa, A., Uchida, K., Koumoto, K., Kato, T., Ikuhara, Y., & Ohta, H. (2009). Electric-field modulation of thermopower for the KTaO3 field-effect transistors. Applied Physics Express, 2(12), [1211103]. https://doi.org/10.1143/APEX.2.1211103