Electric-field modulation of Curie temperature in (Ga,Mn)As field-effect transistor structures with varying channel thickness and Mn compositions

Y. Nishitani, D. Chiba, M. Endo, F. Matsukura, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated the change of TC of ferromagnetic semiconductor (Ga, Mn)As by changing hole concentration p. The field effect transistor structure was utilized to change p. The relation T C∝p0.2 is obtained for three samples, despite the difference of their Mn composition and thickness, indicating that the relation holds over 2 decades of p.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages409-410
Number of pages2
DOIs
Publication statusPublished - 2009 Dec 1
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 2008 Jul 272008 Aug 1

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period08/7/2708/8/1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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