Electric field-induced transport modulation in VO2 FETs with high- k oxide/organic parylene-C hybrid gate dielectric

Tingting Wei, Teruo Kanki, Kohei Fujiwara, Masashi Chikanari, Hidekazu Tanaka

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.

Original languageEnglish
Article number053503
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2016 Feb 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Electric field-induced transport modulation in VO<sub>2</sub> FETs with high- k oxide/organic parylene-C hybrid gate dielectric'. Together they form a unique fingerprint.

Cite this