Electro-static carrier doping was attempted in a layered transition metal disulphide MoS 2 by constructing an electric double-layer transistor with an ionic liquid. With the application of gate voltage V G higher than 3 V, a metallic behavior was observed in the MoS 2 channel. We found an onset of electric field-induced superconductivity in the field induced metallic phase. A maximum T C ∼ 9.4 K was observed, which could be higher than those in chemically doped bulk materials.
|Journal||Applied Physics Letters|
|Publication status||Published - 2012 Jul 23|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)