Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance

S. Kanai; F. Matsukura; H. Ohno

doi:10.1063/1.4948763

Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance

S. Kanai, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

We show the electric-field induced magnetization switching for CoFeB/MgO magnetic tunnel junctions with thick MgO barrier layer of 2.8 nm, whose resistance-area product is 176 kΩ μm², and achieve the small switching energy of 6.3 fJ/bit. The increase of the junction resistance is expected to suppress the energy consumption due to the Joule heating during the switching; however, the energy is still dominated by the Joule energy rather than the charging energy. This is because the junction resistance decreases more rapidly for junctions with thicker MgO as bias voltage increases.

Original language	English
Article number	192406
Journal	Applied Physics Letters
Volume	108
Issue number	19
DOIs	https://doi.org/10.1063/1.4948763
Publication status	Published - 2016 May 9

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We show the electric-field induced magnetization switching for CoFeB/MgO magnetic tunnel junctions with thick MgO barrier layer of 2.8 nm, whose resistance-area product is 176 kΩ μm2, and achieve the small switching energy of 6.3 fJ/bit. The increase of the junction resistance is expected to suppress the energy consumption due to the Joule heating during the switching; however, the energy is still dominated by the Joule energy rather than the charging energy. This is because the junction resistance decreases more rapidly for junctions with thicker MgO as bias voltage increases.",

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AU - Kanai, S.

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N2 - We show the electric-field induced magnetization switching for CoFeB/MgO magnetic tunnel junctions with thick MgO barrier layer of 2.8 nm, whose resistance-area product is 176 kΩ μm2, and achieve the small switching energy of 6.3 fJ/bit. The increase of the junction resistance is expected to suppress the energy consumption due to the Joule heating during the switching; however, the energy is still dominated by the Joule energy rather than the charging energy. This is because the junction resistance decreases more rapidly for junctions with thicker MgO as bias voltage increases.

AB - We show the electric-field induced magnetization switching for CoFeB/MgO magnetic tunnel junctions with thick MgO barrier layer of 2.8 nm, whose resistance-area product is 176 kΩ μm2, and achieve the small switching energy of 6.3 fJ/bit. The increase of the junction resistance is expected to suppress the energy consumption due to the Joule heating during the switching; however, the energy is still dominated by the Joule energy rather than the charging energy. This is because the junction resistance decreases more rapidly for junctions with thicker MgO as bias voltage increases.

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Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance

Abstract

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