Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

274 Citations (Scopus)

Abstract

The electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.

Original languageEnglish
Article number122403
JournalApplied Physics Letters
Volume101
Issue number12
DOIs
Publication statusPublished - 2012 Sep 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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