Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers

H. W. Chang, S. Akita, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We report molecular beam epitaxy of a ferromagnetic semiconductor (Ga,Mn)Sb, which is a single crystal without detectable second phases. We report also the details of magnetotransport properties of (Ga,Mn)Sb and the effects of electric fields on them. The difference between the properties observed here and properties of those reported earlier for a ferromagnetic semiconductor (Ga,Mn)As, provides information critical for further understanding of fundamental and device physics of ferromagnetic semiconductors.

Original languageEnglish
Pages (from-to)633-635
Number of pages3
JournalJournal of Crystal Growth
Volume401
DOIs
Publication statusPublished - 2014 Sep 1

Keywords

  • A3. Molecular beam epitaxy
  • B1. Antimonides
  • B2. Magnetic materials
  • B2. Semiconducting III-V materials
  • B3. Field effect transistors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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