Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In,Mn)As and ((Al),Ga,Mn)As

D. Chiba, M. Yamanouchi, F. Matsukura, E. Abe, Y. Ohno, K. Ohtani, H. Ohno

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We have investigated the magnetotransport properties of field-effect transistors (FET) having a III-V ferromagnetic semiconductor channel layer. One can control not only the ferromagnetic transition temperature TC but also the magnetization and the coercive force of (In,Mn)As channel layers isothermally and reversibly by gate electric fields. A small change of the magnetization upon application of gate electric fields is also observed in FETs with a (Ga,Mn)As channel. Results on a (Al,Ga,Mn)As channel FET are also presented.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume16
Issue number1
Publication statusPublished - 2003

Keywords

  • (Ga,Mn)As
  • (In,Mn)As
  • Carrier-induced ferromagnetism
  • Field-effect transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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