Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells

A. Mathur, Y. Ohno, F. Matsukura, K. Ohtani, N. Akiba, T. Kuroiwa, H. Nakajima, H. Ohno

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The effects of applied electric fields on intersubband (ISB) transitions in modulation-doped n-i-n and p-i-n type GaAs/AlGaAs single quantum well (SQW) structures are studied experimentally using Fourier Transform InfraRed (FTIR) spectroscopy. The n-i-n SQW devices exhibit a red shift of 0.7 meV in the ISB transition energy and a 12% decrease in the integrated absorbance at the maximum applied bias of 3.2 V with reference to their zero bias values, most of which is attributed to a rise in the device temperature due to Joule heating owing to the current flowing through the device. The p-i-n SQW devices exhibit strong quenching of the absorption when a negative bias is applied, while there was no observable shift in the ISB transition energy.

Original languageEnglish
Pages (from-to)90-96
Number of pages7
JournalApplied Surface Science
Publication statusPublished - 1997 Apr


  • FTIR spectroscopy
  • Intersubband transitions
  • Molecular beam epitaxy
  • Quantum wells

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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