The authors show modulation of Curie temperature TC and coercivity μ0 Hc by applying external electric fields E in a ferromagnetic semiconductor (Ga,Mn)As, where a field-effect transistor structure with an Al2 O3 gate insulator is utilized. Application of E=+5 (-5) MVcm decreases (increases) TC of the channel layer. μ0 Hc also decreases (increases) with increasing (decreasing) E below TC. The mechanism of the modulation of μ0 Hc by E is discussed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)