Electric double layer transistor with a (Ga,Mn)As channel

M. Endo, D. Chiba, H. Shimotani, F. Matsukura, Y. Iwasa, H. Ohno

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35 Citations (Scopus)

Abstract

The authors have fabricated electric double layer transistors with a (Ga,Mn)As channel to investigate the possibility of larger modulation of magnetism by the application of electric fields. The sheet conductance as well as the Curie temperature can be modulated up to a few tens of percents by application of gate voltage of a few volts, which is almost one-order of magnitude smaller than that required in conventional metal-insulator- semiconductor structures. The 14 K modulation of the Curie temperature by applying gate voltage ranging from -1 to 3 V is the highest modulation ratio reported so far in ferromagnetic semiconductors.

Original languageEnglish
Article number022515
JournalApplied Physics Letters
Volume96
Issue number2
DOIs
Publication statusPublished - 2010 Jan 25

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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