Electric characteristics of Si3N4 films formed by directly radical nitridation on Si(110) and Si(100) surfaces

Masaaki Higuchi, Takashi Aratani, Tatsufumi Hamada, Seiji Shinagawa, Hiroshi Nohira, Eiji Ikenaga, Akinobu Teramoto, Takeo Hattori, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the interface states density at midgap for Si3N4/Si interface is less than 5 × 1010 eV-1 cm-2. High-resolution soft-X-ray-excited Si 2p spectra were measured for the Si 3N4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si3N4/Si interface.

Original languageEnglish
Pages (from-to)1895-1898
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2007 Apr 24


  • Interface states density
  • Interface structure
  • Interfacial transition region
  • Leakage current density
  • SiN/Si
  • Silicon nitride

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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