TY - JOUR
T1 - Electric characteristics of Si3N4 films formed by directly radical nitridation on Si(110) and Si(100) surfaces
AU - Higuchi, Masaaki
AU - Aratani, Takashi
AU - Hamada, Tatsufumi
AU - Shinagawa, Seiji
AU - Nohira, Hiroshi
AU - Ikenaga, Eiji
AU - Teramoto, Akinobu
AU - Hattori, Takeo
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2007/4/24
Y1 - 2007/4/24
N2 - High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the interface states density at midgap for Si3N4/Si interface is less than 5 × 1010 eV-1 cm-2. High-resolution soft-X-ray-excited Si 2p spectra were measured for the Si 3N4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si3N4/Si interface.
AB - High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the interface states density at midgap for Si3N4/Si interface is less than 5 × 1010 eV-1 cm-2. High-resolution soft-X-ray-excited Si 2p spectra were measured for the Si 3N4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si3N4/Si interface.
KW - Interface states density
KW - Interface structure
KW - Interfacial transition region
KW - Leakage current density
KW - SiN/Si
KW - Silicon nitride
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U2 - 10.1143/JJAP.46.1895
DO - 10.1143/JJAP.46.1895
M3 - Article
AN - SCOPUS:34547883576
VL - 46
SP - 1895
EP - 1898
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -