Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides

H. Nohira; K. Hirose; K. Takahashi; T. Hattori

doi:10.1016/S0169-4332(00)00208-7

Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides

H. Nohira, K. Hirose, K. Takahashi, T. Hattori

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si(100). The results of these simulations revealed a total elastic scattering cross-section of 1.5×10^-20 m² and an inelastic scattering cross-section of 1.6×10^-20 m². In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness.

Original language	English
Pages (from-to)	304-308
Number of pages	5
Journal	Applied Surface Science
Volume	162
DOIs	https://doi.org/10.1016/S0169-4332(00)00208-7
Publication status	Published - 2000 Aug 1
Event	5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France Duration: 1999 Jul 6 → 1999 Jul 9

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides",

abstract = "The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si(100). The results of these simulations revealed a total elastic scattering cross-section of 1.5×10-20 m2 and an inelastic scattering cross-section of 1.6×10-20 m2. In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness.",

author = "H. Nohira and K. Hirose and K. Takahashi and T. Hattori",

note = "Funding Information: One of the authors (T.H.) expresses his sincere thanks to Drs. K. Yamada and K. Usuda of TOSHIBA Corp. for supplying the silicon wafers used in the present study. This work was partially supported by the Ministry of Education, Science, Sports and Culture through a Grant-in-Aid for Scientific Research (B) (No. 10450020).; 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) ; Conference date: 06-07-1999 Through 09-07-1999",

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doi = "10.1016/S0169-4332(00)00208-7",

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TY - JOUR

T1 - Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides

AU - Nohira, H.

AU - Hirose, K.

AU - Takahashi, K.

AU - Hattori, T.

N1 - Funding Information: One of the authors (T.H.) expresses his sincere thanks to Drs. K. Yamada and K. Usuda of TOSHIBA Corp. for supplying the silicon wafers used in the present study. This work was partially supported by the Ministry of Education, Science, Sports and Culture through a Grant-in-Aid for Scientific Research (B) (No. 10450020).

PY - 2000/8/1

Y1 - 2000/8/1

N2 - The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si(100). The results of these simulations revealed a total elastic scattering cross-section of 1.5×10-20 m2 and an inelastic scattering cross-section of 1.6×10-20 m2. In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness.

AB - The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si(100). The results of these simulations revealed a total elastic scattering cross-section of 1.5×10-20 m2 and an inelastic scattering cross-section of 1.6×10-20 m2. In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness.

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DO - 10.1016/S0169-4332(00)00208-7

M3 - Conference article

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VL - 162

SP - 304

EP - 308

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

T2 - 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)

Y2 - 6 July 1999 through 9 July 1999

ER -