TY - JOUR
T1 - Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides
AU - Nohira, H.
AU - Hirose, K.
AU - Takahashi, K.
AU - Hattori, T.
N1 - Funding Information:
One of the authors (T.H.) expresses his sincere thanks to Drs. K. Yamada and K. Usuda of TOSHIBA Corp. for supplying the silicon wafers used in the present study. This work was partially supported by the Ministry of Education, Science, Sports and Culture through a Grant-in-Aid for Scientific Research (B) (No. 10450020).
PY - 2000/8/1
Y1 - 2000/8/1
N2 - The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si(100). The results of these simulations revealed a total elastic scattering cross-section of 1.5×10-20 m2 and an inelastic scattering cross-section of 1.6×10-20 m2. In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness.
AB - The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si(100). The results of these simulations revealed a total elastic scattering cross-section of 1.5×10-20 m2 and an inelastic scattering cross-section of 1.6×10-20 m2. In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness.
UR - http://www.scopus.com/inward/record.url?scp=0034249110&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034249110&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(00)00208-7
DO - 10.1016/S0169-4332(00)00208-7
M3 - Conference article
AN - SCOPUS:0034249110
VL - 162
SP - 304
EP - 308
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
T2 - 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)
Y2 - 6 July 1999 through 9 July 1999
ER -