Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides

H. Nohira, K. Hirose, K. Takahashi, T. Hattori

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

Abstract

The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si(100). The results of these simulations revealed a total elastic scattering cross-section of 1.5×10-20 m2 and an inelastic scattering cross-section of 1.6×10-20 m2. In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness.

Original languageEnglish
Pages (from-to)304-308
Number of pages5
JournalApplied Surface Science
Volume162
DOIs
Publication statusPublished - 2000 Aug 1
Externally publishedYes
Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
Duration: 1999 Jul 61999 Jul 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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