Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides

H. Nohira, K. Hirose, K. Takahashi, T. Hattori

    Research output: Contribution to journalConference articlepeer-review

    10 Citations (Scopus)

    Abstract

    The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si(100). The results of these simulations revealed a total elastic scattering cross-section of 1.5×10-20 m2 and an inelastic scattering cross-section of 1.6×10-20 m2. In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness.

    Original languageEnglish
    Pages (from-to)304-308
    Number of pages5
    JournalApplied Surface Science
    Volume162
    DOIs
    Publication statusPublished - 2000 Aug 1
    Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
    Duration: 1999 Jul 61999 Jul 9

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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