Elastic scattering of Si 2p photoelectrons in silicon oxide

T. Hattori, K. Hirose, H. Nohira, K. Takahashi, T. Yagi

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    17 Citations (Scopus)

    Abstract

    The cross-sections for elastic and inelastic scattering of Si 2p photoelectrons in silicon oxide were uniquely determined from the analysis of oxidation-induced changes in Si 2p photoelectron diffraction patterns arising from single crystalline Si substrate under the assumption that the structure of hydrogen-terminated Si substrate does not change by the oxidation. It was found from the Monte Carlo calculation of path of elastically and inelastically scattered Si 2p photoelectrons for the simulation of oxidation-induced changes in photoelectron diffraction patterns that the total elastic scattering cross-section and the inelastic scattering cross-section are 1.54 × 10 -20 and 1.26 × 10 -20 m 2 , respectively.

    Original languageEnglish
    Pages (from-to)297-300
    Number of pages4
    JournalApplied Surface Science
    Volume144-145
    DOIs
    Publication statusPublished - 1999 Apr

    Keywords

    • Elastic scattering
    • Si 2p photoelectrons
    • Silicon oxide

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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