Elastic scattering and the current-voltage characteristics of superconducting Nb-InAs-Nb junctions

Niko Van Der Post; Junsaku Nitta; Hideaki Takayanagi

doi:10.1063/1.110431

Elastic scattering and the current-voltage characteristics of superconducting Nb-InAs-Nb junctions

Niko Van Der Post, Junsaku Nitta, Hideaki Takayanagi

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Superconducting niobium contacts are attached to a 0.8-μm-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonstrate that an increase in the elastic scattering rate in the InAs channel, caused by Ar-ion etching, diminishes the order of Andreev reflections and explains the overall shape of the current-voltage characteristics.

Original language	English
Pages (from-to)	2555-2557
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	18
DOIs	https://doi.org/10.1063/1.110431
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.110431

Cite this

@article{61db5f37de204586bdbed4d0c543454a,

title = "Elastic scattering and the current-voltage characteristics of superconducting Nb-InAs-Nb junctions",

abstract = "Superconducting niobium contacts are attached to a 0.8-μm-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonstrate that an increase in the elastic scattering rate in the InAs channel, caused by Ar-ion etching, diminishes the order of Andreev reflections and explains the overall shape of the current-voltage characteristics.",

author = "{Van Der Post}, Niko and Junsaku Nitta and Hideaki Takayanagi",

year = "1993",

doi = "10.1063/1.110431",

language = "English",

volume = "63",

pages = "2555--2557",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Elastic scattering and the current-voltage characteristics of superconducting Nb-InAs-Nb junctions

AU - Van Der Post, Niko

AU - Nitta, Junsaku

AU - Takayanagi, Hideaki

PY - 1993

Y1 - 1993

N2 - Superconducting niobium contacts are attached to a 0.8-μm-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonstrate that an increase in the elastic scattering rate in the InAs channel, caused by Ar-ion etching, diminishes the order of Andreev reflections and explains the overall shape of the current-voltage characteristics.

AB - Superconducting niobium contacts are attached to a 0.8-μm-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonstrate that an increase in the elastic scattering rate in the InAs channel, caused by Ar-ion etching, diminishes the order of Andreev reflections and explains the overall shape of the current-voltage characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0009403267&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0009403267&partnerID=8YFLogxK

U2 - 10.1063/1.110431

DO - 10.1063/1.110431

M3 - Article

AN - SCOPUS:0009403267

VL - 63

SP - 2555

EP - 2557

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -

Elastic scattering and the current-voltage characteristics of superconducting Nb-InAs-Nb junctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this