Elastic scattering and the current-voltage characteristics of superconducting Nb-InAs-Nb junctions

Niko Van Der Post; Junsaku Nitta; Hideaki Takayanagi

doi:10.1063/1.110431

Elastic scattering and the current-voltage characteristics of superconducting Nb-InAs-Nb junctions

Niko Van Der Post, Junsaku Nitta, Hideaki Takayanagi

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Superconducting niobium contacts are attached to a 0.8-μm-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonstrate that an increase in the elastic scattering rate in the InAs channel, caused by Ar-ion etching, diminishes the order of Andreev reflections and explains the overall shape of the current-voltage characteristics.

Original language	English
Pages (from-to)	2555-2557
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	18
DOIs	https://doi.org/10.1063/1.110431
Publication status	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110431

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abstract = "Superconducting niobium contacts are attached to a 0.8-μm-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonstrate that an increase in the elastic scattering rate in the InAs channel, caused by Ar-ion etching, diminishes the order of Andreev reflections and explains the overall shape of the current-voltage characteristics.",

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AB - Superconducting niobium contacts are attached to a 0.8-μm-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonstrate that an increase in the elastic scattering rate in the InAs channel, caused by Ar-ion etching, diminishes the order of Andreev reflections and explains the overall shape of the current-voltage characteristics.

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