Abstract
Superconducting niobium contacts are attached to a 0.8-μm-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonstrate that an increase in the elastic scattering rate in the InAs channel, caused by Ar-ion etching, diminishes the order of Andreev reflections and explains the overall shape of the current-voltage characteristics.
Original language | English |
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Pages (from-to) | 2555-2557 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 63 |
Issue number | 18 |
DOIs | |
Publication status | Published - 1993 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)