El2 out-diffusion in thermally annealed liquid-encapsulated czochralski gaas

Junzo Ogata, Akiyoshi Iwai, Shigefusa Chichibu, Satoru Matsumoto

Research output: Contribution to journalArticlepeer-review

Abstract

The annealing behavior of the native defect EL2 in GaAs grown by the liquid-encapsulated Czochralski (LEC) method has been investigated by means of deep-level transient spectroscopy (DLTS). After annealing in vacuum, the EL2 out-diffusion profiles were strongly dependent on the annealing temperature and time. Applying the three-step model for EL2 out-diffusion, the activation energy of the diffusion for an arsenic vacancy (Vas) was estimated to be about 3-4 eV.

Original languageEnglish
Pages (from-to)5059-5060
Number of pages2
JournalJapanese journal of applied physics
Volume32
Issue number11 R
DOIs
Publication statusPublished - 1993 Nov
Externally publishedYes

Keywords

  • Crystal Orientation
  • Deep-level transient spectroscopy
  • EL2 out-diffusion
  • Electron trap
  • LEC GaAs
  • Thermal annealing

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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