A four-period InGaN/GaN (8 nm/48 nm) layered structure was deposited on a Si substrate with a surface-nitrified HfO2 film as a buffer layer (5 nm). A high In concentration of In0.36Ga0.64N was obtained in the InGaN layers. Red photoluminescence of 648 nm was observed from the layered structure. The internal quantum efficiency of the red emission from the InGaN layers on the surfacenitrified HfO2/Si was 52 %, which was more than 18 times larger than that on the Si substrate without HfO2. The surface-nitrified HfO2 provides another effective buffer layer to grow the InGaN/GaN layered structure on the Si substrate.
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2016 Mar|
ASJC Scopus subject areas
- Materials Science(all)