Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT

Y. M. Meziani; T. Nishimura; H. Handa; H. Tsuda; T. Suemitsu; W. Knap; T. Otsuji; E. Sano; G. M. Tsymbalov; V. V. Popov

doi:10.1117/1.3266497

Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT

Y. M. Meziani, T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, W. Knap, T. Otsuji, E. Sano, G. M. Tsymbalov, V. V. Popov

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the emission of terahertz radiation from a doubly interdigitated grating gates high electron mobility transistor. The experiment was performed using Fourier spectrometer system coupled with high sensitive 4 K Silicon bolometer under the vacuum. The observed emission was explained as due to the excitation of the plasma waves by means of hot 2D plasmons. We also investigated the optical stimulation of the plasma waves by subjecting the device to a CW 1.5 μm laser beam. Dependence of the emission on the gate bias (i.e. on electron density) was observed and interpreted as due to the self oscillation of the plasma waves.

Original language	English
Article number	031980
Journal	Journal of Nanophotonics
Volume	3
Issue number	1
DOIs	https://doi.org/10.1117/1.3266497
Publication status	Published - 2009 Dec 1

Keywords

Terahertz rays
high electron mobility transistors
plasma waves
two-dimensional electron gaz

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT. / Meziani, Y. M.; Nishimura, T.; Handa, H.; Tsuda, H.; Suemitsu, T.; Knap, W.; Otsuji, T.; Sano, E.; Tsymbalov, G. M.; Popov, V. V.

In: Journal of Nanophotonics, Vol. 3, No. 1, 031980, 01.12.2009.

Research output: Contribution to journal › Article › peer-review

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abstract = "We investigated the emission of terahertz radiation from a doubly interdigitated grating gates high electron mobility transistor. The experiment was performed using Fourier spectrometer system coupled with high sensitive 4 K Silicon bolometer under the vacuum. The observed emission was explained as due to the excitation of the plasma waves by means of hot 2D plasmons. We also investigated the optical stimulation of the plasma waves by subjecting the device to a CW 1.5 μm laser beam. Dependence of the emission on the gate bias (i.e. on electron density) was observed and interpreted as due to the self oscillation of the plasma waves.",

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AU - Meziani, Y. M.

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AU - Handa, H.

AU - Tsuda, H.

AU - Suemitsu, T.

AU - Knap, W.

AU - Otsuji, T.

AU - Sano, E.

AU - Tsymbalov, G. M.

AU - Popov, V. V.

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