Effects of ZnO buffer layers on growth, electrical properties and crystallinity of vanadium-doped ZnO

Takeru Okada; Tomoyuki Kawashima; Tatsuya Mori; Katsuyoshi Washio

doi:10.1016/j.tsf.2020.137954

Effects of ZnO buffer layers on growth, electrical properties and crystallinity of vanadium-doped ZnO

Takeru Okada, Tomoyuki Kawashima, Tatsuya Mori, Katsuyoshi Washio

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Transparent conductive oxides have attracted much attention in the field of optoelectronic device applications. Among these materials, vanadium-doped zinc oxide is unique for its piezoelectricity, transparency, and electric conductivity. In this paper, we investigate the effects of zinc oxide buffer layers on the formation of vanadium-doped zinc oxide. We find that zinc oxide buffer layer thicker than 10 nm has oriented crystal structure, and promote the formation of highly oriented vanadium-doped zinc oxide by reducing electrically inactive layer at the interface. Our investigation indicates that zinc-oxide-based conductive film can be formed by introducing the buffer layer under appropriate conditions. These results provide important information for industrial application of transparent conductive materials.

Original language	English
Article number	137954
Journal	Thin Solid Films
Volume	701
DOIs	https://doi.org/10.1016/j.tsf.2020.137954
Publication status	Published - 2020 May 1

Keywords

Transparent conductive oxides
Vanadium-doped zinc oxide
Zinc oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Effects of ZnO buffer layers on growth, electrical properties and crystallinity of vanadium-doped ZnO",

abstract = "Transparent conductive oxides have attracted much attention in the field of optoelectronic device applications. Among these materials, vanadium-doped zinc oxide is unique for its piezoelectricity, transparency, and electric conductivity. In this paper, we investigate the effects of zinc oxide buffer layers on the formation of vanadium-doped zinc oxide. We find that zinc oxide buffer layer thicker than 10 nm has oriented crystal structure, and promote the formation of highly oriented vanadium-doped zinc oxide by reducing electrically inactive layer at the interface. Our investigation indicates that zinc-oxide-based conductive film can be formed by introducing the buffer layer under appropriate conditions. These results provide important information for industrial application of transparent conductive materials.",

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T1 - Effects of ZnO buffer layers on growth, electrical properties and crystallinity of vanadium-doped ZnO

AU - Okada, Takeru

AU - Kawashima, Tomoyuki

AU - Mori, Tatsuya

AU - Washio, Katsuyoshi

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Transparent conductive oxides have attracted much attention in the field of optoelectronic device applications. Among these materials, vanadium-doped zinc oxide is unique for its piezoelectricity, transparency, and electric conductivity. In this paper, we investigate the effects of zinc oxide buffer layers on the formation of vanadium-doped zinc oxide. We find that zinc oxide buffer layer thicker than 10 nm has oriented crystal structure, and promote the formation of highly oriented vanadium-doped zinc oxide by reducing electrically inactive layer at the interface. Our investigation indicates that zinc-oxide-based conductive film can be formed by introducing the buffer layer under appropriate conditions. These results provide important information for industrial application of transparent conductive materials.

AB - Transparent conductive oxides have attracted much attention in the field of optoelectronic device applications. Among these materials, vanadium-doped zinc oxide is unique for its piezoelectricity, transparency, and electric conductivity. In this paper, we investigate the effects of zinc oxide buffer layers on the formation of vanadium-doped zinc oxide. We find that zinc oxide buffer layer thicker than 10 nm has oriented crystal structure, and promote the formation of highly oriented vanadium-doped zinc oxide by reducing electrically inactive layer at the interface. Our investigation indicates that zinc-oxide-based conductive film can be formed by introducing the buffer layer under appropriate conditions. These results provide important information for industrial application of transparent conductive materials.

KW - Transparent conductive oxides

KW - Vanadium-doped zinc oxide

KW - Zinc oxide

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