Abstract
Transparent conductive oxides have attracted much attention in the field of optoelectronic device applications. Among these materials, vanadium-doped zinc oxide is unique for its piezoelectricity, transparency, and electric conductivity. In this paper, we investigate the effects of zinc oxide buffer layers on the formation of vanadium-doped zinc oxide. We find that zinc oxide buffer layer thicker than 10 nm has oriented crystal structure, and promote the formation of highly oriented vanadium-doped zinc oxide by reducing electrically inactive layer at the interface. Our investigation indicates that zinc-oxide-based conductive film can be formed by introducing the buffer layer under appropriate conditions. These results provide important information for industrial application of transparent conductive materials.
Original language | English |
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Article number | 137954 |
Journal | Thin Solid Films |
Volume | 701 |
DOIs | |
Publication status | Published - 2020 May 1 |
Keywords
- Transparent conductive oxides
- Vanadium-doped zinc oxide
- Zinc oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry