Effects of ZnO buffer layers on growth, electrical properties and crystallinity of vanadium-doped ZnO

Takeru Okada, Tomoyuki Kawashima, Tatsuya Mori, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Transparent conductive oxides have attracted much attention in the field of optoelectronic device applications. Among these materials, vanadium-doped zinc oxide is unique for its piezoelectricity, transparency, and electric conductivity. In this paper, we investigate the effects of zinc oxide buffer layers on the formation of vanadium-doped zinc oxide. We find that zinc oxide buffer layer thicker than 10 nm has oriented crystal structure, and promote the formation of highly oriented vanadium-doped zinc oxide by reducing electrically inactive layer at the interface. Our investigation indicates that zinc-oxide-based conductive film can be formed by introducing the buffer layer under appropriate conditions. These results provide important information for industrial application of transparent conductive materials.

Original languageEnglish
Article number137954
JournalThin Solid Films
Volume701
DOIs
Publication statusPublished - 2020 May 1

Keywords

  • Transparent conductive oxides
  • Vanadium-doped zinc oxide
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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