Effects of V-ion doping on the photoelectrochemical properties of epitaxial TiO 2(110) thin films on Nb-doped TiO 2 (110) single crystals

Atsushi Hachiya, Shintaro Takata, Yutaro Komuro, Yuji Matsumoto

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10 Citations (Scopus)


V-doped TiO 2(110) epitaxial films were grown on atomically flat Nb-doped TiO 2 (110) single-crystal substrates by a pulsed laser deposition method, and their photoelectrochemical properties were investigated. In the photocurrent-potential curves measured in a 0.1 M HClO 4 electrolyte for V-doped TiO 2/Nb-doped TiO 2 photoelectrodes, the photocurrent was almost proportional to the electrode potential, and there was a good linear relationship between the inverse of the photocurrent density obtained at +0.6 V versus Ag/AgCl KCl (sat.) and the V doping level. The potential at which the photocurrent appeared, that is, the flat-band potential, was about +0.33 V irrespective of the doping level, whereas it was about -0.25 V for the nondoped one. When a 0.01 M AgNO 3 electrolyte was used, a sizable amount of Ag metal particles was deposited at +0.25 V on the electrode surfaces at V doping levels above 6 at %. The V-doping effects on these photoelectrochemical properties are discussed in terms of the in-gap states induced by the V impurities in TiO 2 as well as their acting not only as a recombination center but also as a mediator of interfacial electron transfer.

Original languageEnglish
Pages (from-to)16951-16956
Number of pages6
JournalJournal of Physical Chemistry C
Issue number32
Publication statusPublished - 2012 Aug 16
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


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