Effects of thin SiO₂ capping layer on silicon-on-insulator formation by lateral solid-phase epitaxy

The effects of a SiO₂ capping layer over an amorphous Si surface on the lateral solid-phase epitaxy of Si are investigated. A thin SiO ₂ layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO₂ and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.