Effects of thin SiO2 capping layer on silicon-on-insulator formation by lateral solid-phase epitaxy

K. Kusukawa; M. Ohkura; Masahiro Moniwa; M. Miyao

doi:10.1063/1.107381

Effects of thin SiO₂ capping layer on silicon-on-insulator formation by lateral solid-phase epitaxy

K. Kusukawa, M. Ohkura, Masahiro Moniwa, M. Miyao

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effects of a SiO₂ capping layer over an amorphous Si surface on the lateral solid-phase epitaxy of Si are investigated. A thin SiO ₂ layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO₂ and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.

Original language	English
Pages (from-to)	80-81
Number of pages	2
Journal	Applied Physics Letters
Volume	60
Issue number	1
DOIs	https://doi.org/10.1063/1.107381
Publication status	Published - 1992 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{75f9ac9203134a87bb1d7931c72e4202,

title = "Effects of thin SiO2 capping layer on silicon-on-insulator formation by lateral solid-phase epitaxy",

abstract = "The effects of a SiO2 capping layer over an amorphous Si surface on the lateral solid-phase epitaxy of Si are investigated. A thin SiO 2 layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO2 and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.",

author = "K. Kusukawa and M. Ohkura and Masahiro Moniwa and M. Miyao",

year = "1992",

month = dec,

day = "1",

doi = "10.1063/1.107381",

language = "English",

volume = "60",

pages = "80--81",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Effects of thin SiO2 capping layer on silicon-on-insulator formation by lateral solid-phase epitaxy

AU - Kusukawa, K.

AU - Ohkura, M.

AU - Moniwa, Masahiro

AU - Miyao, M.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - The effects of a SiO2 capping layer over an amorphous Si surface on the lateral solid-phase epitaxy of Si are investigated. A thin SiO 2 layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO2 and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.

AB - The effects of a SiO2 capping layer over an amorphous Si surface on the lateral solid-phase epitaxy of Si are investigated. A thin SiO 2 layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO2 and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.

UR - http://www.scopus.com/inward/record.url?scp=3343006476&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3343006476&partnerID=8YFLogxK

U2 - 10.1063/1.107381

DO - 10.1063/1.107381

M3 - Article

AN - SCOPUS:3343006476

VL - 60

SP - 80

EP - 81

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1