We have investigated the charge density and N chemical states in HfSiON films annealed at various oxygen gas pressures by time-dependent photoemission spectroscopy. The Si 2p core-level spectra and the sample current reveal that annealing these films at low oxygen partial pressures affects the number of inherent fixed charges and annealing at high oxygen partial pressures results in a decrease in the number of trapped charges. The N 1s spectra of the annealed HfSiON samples indicate a decrease in Hf-N bonds due to the substitution of N by O along with a decrease in the number of trapped charges.
|Journal||Applied Physics Letters|
|Publication status||Published - 2009|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)