Effects of thermal annealing on charge density and N chemical states in HfSiON films

T. Tanimura, H. Kamada, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have investigated the charge density and N chemical states in HfSiON films annealed at various oxygen gas pressures by time-dependent photoemission spectroscopy. The Si 2p core-level spectra and the sample current reveal that annealing these films at low oxygen partial pressures affects the number of inherent fixed charges and annealing at high oxygen partial pressures results in a decrease in the number of trapped charges. The N 1s spectra of the annealed HfSiON samples indicate a decrease in Hf-N bonds due to the substitution of N by O along with a decrease in the number of trapped charges.

Original languageEnglish
Article number082903
JournalApplied Physics Letters
Volume94
Issue number8
DOIs
Publication statusPublished - 2009 Mar 6
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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