Effects of thermal annealing on charge density and N chemical states in HfSiON films

T. Tanimura; H. Kamada; S. Toyoda; H. Kumigashira; M. Oshima; G. L. Liu; Z. Liu; K. Ikeda

doi:10.1063/1.3088856

Effects of thermal annealing on charge density and N chemical states in HfSiON films

T. Tanimura, H. Kamada, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have investigated the charge density and N chemical states in HfSiON films annealed at various oxygen gas pressures by time-dependent photoemission spectroscopy. The Si 2p core-level spectra and the sample current reveal that annealing these films at low oxygen partial pressures affects the number of inherent fixed charges and annealing at high oxygen partial pressures results in a decrease in the number of trapped charges. The N 1s spectra of the annealed HfSiON samples indicate a decrease in Hf-N bonds due to the substitution of N by O along with a decrease in the number of trapped charges.

Original language	English
Article number	082903
Journal	Applied Physics Letters
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.3088856
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3088856

Cite this

@article{06320e36482a45f3a47fad3d432a44b5,

title = "Effects of thermal annealing on charge density and N chemical states in HfSiON films",

abstract = "We have investigated the charge density and N chemical states in HfSiON films annealed at various oxygen gas pressures by time-dependent photoemission spectroscopy. The Si 2p core-level spectra and the sample current reveal that annealing these films at low oxygen partial pressures affects the number of inherent fixed charges and annealing at high oxygen partial pressures results in a decrease in the number of trapped charges. The N 1s spectra of the annealed HfSiON samples indicate a decrease in Hf-N bonds due to the substitution of N by O along with a decrease in the number of trapped charges.",

author = "T. Tanimura and H. Kamada and S. Toyoda and H. Kumigashira and M. Oshima and Liu, {G. L.} and Z. Liu and K. Ikeda",

note = "Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc., (Selete) for providing the high- gate dielectric samples. This work was supported by the Semiconductor Technology Academic Research Center (STARC). The synchrotron-radiation photoemission measurements were performed under the project 05S2-002 at the Institute of Materials Structure Science at KEK.",

year = "2009",

doi = "10.1063/1.3088856",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Effects of thermal annealing on charge density and N chemical states in HfSiON films

AU - Tanimura, T.

AU - Kamada, H.

AU - Toyoda, S.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Liu, G. L.

AU - Liu, Z.

AU - Ikeda, K.

N1 - Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc., (Selete) for providing the high- gate dielectric samples. This work was supported by the Semiconductor Technology Academic Research Center (STARC). The synchrotron-radiation photoemission measurements were performed under the project 05S2-002 at the Institute of Materials Structure Science at KEK.

PY - 2009

Y1 - 2009

N2 - We have investigated the charge density and N chemical states in HfSiON films annealed at various oxygen gas pressures by time-dependent photoemission spectroscopy. The Si 2p core-level spectra and the sample current reveal that annealing these films at low oxygen partial pressures affects the number of inherent fixed charges and annealing at high oxygen partial pressures results in a decrease in the number of trapped charges. The N 1s spectra of the annealed HfSiON samples indicate a decrease in Hf-N bonds due to the substitution of N by O along with a decrease in the number of trapped charges.

AB - We have investigated the charge density and N chemical states in HfSiON films annealed at various oxygen gas pressures by time-dependent photoemission spectroscopy. The Si 2p core-level spectra and the sample current reveal that annealing these films at low oxygen partial pressures affects the number of inherent fixed charges and annealing at high oxygen partial pressures results in a decrease in the number of trapped charges. The N 1s spectra of the annealed HfSiON samples indicate a decrease in Hf-N bonds due to the substitution of N by O along with a decrease in the number of trapped charges.

UR - http://www.scopus.com/inward/record.url?scp=61349193728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=61349193728&partnerID=8YFLogxK

U2 - 10.1063/1.3088856

DO - 10.1063/1.3088856

M3 - Article

AN - SCOPUS:61349193728

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082903

ER -

Effects of thermal annealing on charge density and N chemical states in HfSiON films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this