Effects of the hole tunneling barrier width on the electrical characteristic in silicon quantum dots light-emitting diodes

Tae Youb Kim, Nae Man Park, Cheol Jong Choi, Chul Huh, Chang Geun Ahn, Gun Yong Sung, In Kyu You, Maki Suemitsu

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3 Citations (Scopus)

Abstract

Electrical properties of the Silicon quantum dots (Si-QD) light-emitting diodes (LEDs), in its dependence on the nitrogen source used in the silicon nitride (SiNx ) matrix growth, have been studied. Si-QDs are formed in-situ during the SiNx film growth, and no post-annealing process for crystallization was applied. To confirm the electrical properties of the Si-QD devices, we manufacture the Si-QD LED. Both p-type and p+-type Si substrate were tested in role of hole tunneling in the LED performance. The high-resolution transmission electron microscopy (HRTEM) analyses and the current-voltage (I-V) measurement show that the Si-QDs embedded in the SiN x grown with ammonia (NH3) are located at the interface between the SiNx film and the Si substrate. This is related to the observed increase in the forward current by considering a decrease in the hole tunneling barrier width between the Si substrate and the Si-QDs.

Original languageEnglish
Article number04DG11
JournalJapanese journal of applied physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Kim, T. Y., Park, N. M., Choi, C. J., Huh, C., Ahn, C. G., Sung, G. Y., You, I. K., & Suemitsu, M. (2011). Effects of the hole tunneling barrier width on the electrical characteristic in silicon quantum dots light-emitting diodes. Japanese journal of applied physics, 50(4 PART 2), [04DG11]. https://doi.org/10.1143/JJAP.50.04DG11