Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

T. Koyama; A. N. Fouda; N. Shibata; S. F. Chichibu

doi:10.1063/1.2786090

Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

T. Koyama, A. N. Fouda, N. Shibata, S. F. Chichibu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A -and B -exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (11 2- 0) Al2 O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.

Original language	English
Article number	073505
Journal	Journal of Applied Physics
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.2786090
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.2786090

Cite this

@article{161ebb6f49424724aab859690b34d481,

title = "Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates",

abstract = "The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A -and B -exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (11 2- 0) Al2 O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.",

author = "T. Koyama and Fouda, {A. N.} and N. Shibata and Chichibu, {S. F.}",

note = "Funding Information: This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” and Grant-in-Aid for Scientific Research Nos. 16360146 and 19360137 under MEXT, the Inamori Foundation, and AOARD (No. 04-4075)/ AFOSR. ",

year = "2007",

doi = "10.1063/1.2786090",

language = "English",

volume = "102",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

AU - Koyama, T.

AU - Fouda, A. N.

AU - Shibata, N.

AU - Chichibu, S. F.

N1 - Funding Information: This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” and Grant-in-Aid for Scientific Research Nos. 16360146 and 19360137 under MEXT, the Inamori Foundation, and AOARD (No. 04-4075)/ AFOSR.

PY - 2007

Y1 - 2007

N2 - The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A -and B -exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (11 2- 0) Al2 O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.

AB - The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A -and B -exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (11 2- 0) Al2 O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.

UR - http://www.scopus.com/inward/record.url?scp=35348873754&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35348873754&partnerID=8YFLogxK

U2 - 10.1063/1.2786090

DO - 10.1063/1.2786090

M3 - Article

AN - SCOPUS:35348873754

VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 073505

ER -

Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this