Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

T. Koyama; A. N. Fouda; N. Shibata; S. F. Chichibu

doi:10.1063/1.2786090

Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

T. Koyama, A. N. Fouda, N. Shibata, S. F. Chichibu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A -and B -exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (11 2- 0) Al2 O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.

Original language	English
Article number	073505
Journal	Journal of Applied Physics
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.2786090
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates. / Koyama, T.; Fouda, A. N.; Shibata, N.; Chichibu, S. F.

In: Journal of Applied Physics, Vol. 102, No. 7, 073505, 2007.

Research output: Contribution to journal › Article › peer-review

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abstract = "The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A -and B -exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (11 2- 0) Al2 O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.",

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note = "Funding Information: This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” and Grant-in-Aid for Scientific Research Nos. 16360146 and 19360137 under MEXT, the Inamori Foundation, and AOARD (No. 04-4075)/ AFOSR. ",

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AU - Fouda, A. N.

AU - Shibata, N.

AU - Chichibu, S. F.

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Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

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