Abstract
The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A -and B -exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (11 2- 0) Al2 O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.
Original language | English |
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Article number | 073505 |
Journal | Journal of Applied Physics |
Volume | 102 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)