Effects of the compliance current on the resistive switching behavior of TiO2 thin films

X. Cao; X. M. Li; X. D. Gao; Iun Zuan; X. J. Liu; Q. Wang; L. D. Chen

doi:10.1007/s00339-009-5351-7

Effects of the compliance current on the resistive switching behavior of TiO₂ thin films

X. Cao, X. M. Li, X. D. Gao, Iun Zuan, X. J. Liu, Q. Wang, L. D. Chen

Creative Interdisciplinary Research Division

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Nanocrystalline TiO₂ thin films were fabricated on Pt(111)/Ti/SiO₂/Si substrates by the thermal oxidation of evaporated Ti films. Effects of the compliance current on the resistive switching behavior of the Pt/TiO₂/Pt sandwich structures were studied in detail. The reset current increased when the compliance current increased from 10 mA to 20 mA. When the compliance current exceeded 20 mA, the switching behavior disappeared, which could be attributed to the change of the conducting behavior in the low-resistance state. A resistance change ratio of as high as 10 ² was obtained between the high-resistance state and the low-resistance state. The study of the effect of compliance current contributes to obtaining stable and reliable resistive switching behavior for nonvolatile memory applications.

Original language	English
Pages (from-to)	883-887
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	97
Issue number	4
DOIs	https://doi.org/10.1007/s00339-009-5351-7
Publication status	Published - 2009 Dec 1

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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abstract = "Nanocrystalline TiO2 thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the thermal oxidation of evaporated Ti films. Effects of the compliance current on the resistive switching behavior of the Pt/TiO2/Pt sandwich structures were studied in detail. The reset current increased when the compliance current increased from 10 mA to 20 mA. When the compliance current exceeded 20 mA, the switching behavior disappeared, which could be attributed to the change of the conducting behavior in the low-resistance state. A resistance change ratio of as high as 10 2 was obtained between the high-resistance state and the low-resistance state. The study of the effect of compliance current contributes to obtaining stable and reliable resistive switching behavior for nonvolatile memory applications.",

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T1 - Effects of the compliance current on the resistive switching behavior of TiO2 thin films

AU - Cao, X.

AU - Li, X. M.

AU - Gao, X. D.

AU - Zuan, Iun

AU - Liu, X. J.

AU - Wang, Q.

AU - Chen, L. D.

PY - 2009/12/1

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N2 - Nanocrystalline TiO2 thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the thermal oxidation of evaporated Ti films. Effects of the compliance current on the resistive switching behavior of the Pt/TiO2/Pt sandwich structures were studied in detail. The reset current increased when the compliance current increased from 10 mA to 20 mA. When the compliance current exceeded 20 mA, the switching behavior disappeared, which could be attributed to the change of the conducting behavior in the low-resistance state. A resistance change ratio of as high as 10 2 was obtained between the high-resistance state and the low-resistance state. The study of the effect of compliance current contributes to obtaining stable and reliable resistive switching behavior for nonvolatile memory applications.

AB - Nanocrystalline TiO2 thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the thermal oxidation of evaporated Ti films. Effects of the compliance current on the resistive switching behavior of the Pt/TiO2/Pt sandwich structures were studied in detail. The reset current increased when the compliance current increased from 10 mA to 20 mA. When the compliance current exceeded 20 mA, the switching behavior disappeared, which could be attributed to the change of the conducting behavior in the low-resistance state. A resistance change ratio of as high as 10 2 was obtained between the high-resistance state and the low-resistance state. The study of the effect of compliance current contributes to obtaining stable and reliable resistive switching behavior for nonvolatile memory applications.

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Effects of the compliance current on the resistive switching behavior of TiO₂ thin films

Abstract

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