Effects of temperature gradient in the growth of Si0.5Ge0.5 crystals by the traveling liquidus-zone method on board the International Space Station

K. Kinoshita, Y. Arai, Y. Inatomi, T. Tsukada, H. Miyata, R. Tanaka

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Si0.5Ge0.5 crystals were grown at two different temperature gradients on board the International Space Station (ISS) using the traveling liquidus-zone (TLZ) method and effects of temperature gradient on crystal quality were investigated. Although average axial Ge concentration profile was not affected by the temperature gradient, crystal quality was affected greatly. Single crystal length was shortened and constitutional supercooling (CS) is shown to occur more easily at higher temperature gradient. The calculated degree of CS based on the solute concentration profile in the melt and phase diagram data is about 4 times larger when the temperature gradient is twice, which supports the experimental results. Instability at high temperature gradient is unique to the TLZ method and is not common to other crystal growth methods such as the directional solidification method and Czochralski method.

Original languageEnglish
Pages (from-to)49-54
Number of pages6
JournalJournal of Crystal Growth
Volume455
DOIs
Publication statusPublished - 2016 Dec 1

Keywords

  • A1. Convection
  • A1. Diffusion
  • A2. Growth from solution
  • A2. Traveling solvent zone growth
  • B1. Germanium silicon alloys

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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