Effects of presence of phosphorus on the hydrogen desorption kinetics from SiH4/Si (100) surface has been investigated by H2- temperature-programmed-desorption (TPD) measurements. The β1-TPD peak shifted toward higher temperatures by about 10 °C when phosphorus was predeposited to θP=0.25 ML, and the shift increased with decreasing SiH4 exposure. Two analyses, the Arrhenius plot and the order plot, have been applied to the TPD spectra, clarifying that the 0.25 ML phosphorus on clean Si (100) surface suppresses the hydrogen desorption by increasing both the activation energy from 2.0±0.2 to 2.5±0.1 eV and the reaction order from 1.0±0.2 to 2.0±0.2.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1998 Dec 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films