Effects of surface phosphorus on the kinetics of hydrogen desorption from silane-adsorbed Si (100) surface at room temperatures

Maki Suemitsu, Y. Tsukidate, H. Nakazawa, Y. Enta

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Effects of presence of phosphorus on the hydrogen desorption kinetics from SiH4/Si (100) surface has been investigated by H2- temperature-programmed-desorption (TPD) measurements. The β1-TPD peak shifted toward higher temperatures by about 10 °C when phosphorus was predeposited to θP=0.25 ML, and the shift increased with decreasing SiH4 exposure. Two analyses, the Arrhenius plot and the order plot, have been applied to the TPD spectra, clarifying that the 0.25 ML phosphorus on clean Si (100) surface suppresses the hydrogen desorption by increasing both the activation energy from 2.0±0.2 to 2.5±0.1 eV and the reaction order from 1.0±0.2 to 2.0±0.2.

Original languageEnglish
Pages (from-to)1772-1774
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume16
Issue number3
DOIs
Publication statusPublished - 1998 Dec 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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